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IRFSZ14A

Fairchild Semiconductor
Part Number IRFSZ14A
Manufacturer Fairchild Semiconductor
Description Power MOSFET
Published Aug 3, 2016
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File IRFSZ14A PDF File

IRFSZ14A
IRFSZ14A

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡É Operating Temperature Lower Leakage Current : 10 µA (Max.
) @ VDS = 60V Lower RDS(ON) : 0.
097 Ω (Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy O2 Avalanche Current Repetitive Avalanche Energy O1 O1 Peak Diode Recovery dv/dt Total Power Dissipation (TC=25oC ) Linear Derating Factor O3 ...


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