Power MOSFET
Description
$GYDQFHG 3RZHU 026)(7
IRLR/U210A
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 1.185Ω (Typ.)
BVDSS = 200 V RDS(on) = 1.5Ω ID = 2.7 A
D-PAK I-PAK
2
11
3
2 3
Absolute Maximum Ratings...
Fairchild Semiconductor
IRLR210A PDF File
Similar Datasheet