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IRLU210A

Fairchild Semiconductor
Part Number IRLU210A
Manufacturer Fairchild Semiconductor
Description Power MOSFET
Published Aug 4, 2016
Detailed Description $GYDQFHG 3RZHU 026)(7 IRLR/U210A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input C...
Datasheet PDF File IRLU210A PDF File

IRLU210A
IRLU210A

Overview
$GYDQFHG 3RZHU 026)(7 IRLR/U210A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 200V ♦ Lower RDS(ON): 1.
185Ω (Typ.
) BVDSS = 200 V RDS(on) = 1.
5Ω ID = 2.
7 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor (3) Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 from case for 5-seconds 1.
Gate 2.
Drain 3.
Source Value 200 2.
7 1.
7 9 ±20 24 2.
7 2.
1 5 2.
5 21...


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