Power MOSFET
Description
$GYDQFHG 3RZHU 026)(7
IRFR014
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ.)
BVDSS = 60 V RDS(on) = 0.14Ω ID = 8.2 A
D-PAK I-PAK
2
11
3
2 3
Absolute Maximum Ratings
Sy...
Fairchild Semiconductor
IRFR014 PDF File
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