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KSC5022

Inchange Semiconductor
Part Number KSC5022
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 10, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5022 DESCRIPTION ·Collector-Emitt...
Datasheet PDF File KSC5022 PDF File

KSC5022
KSC5022

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5022 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.
5 A 60 W 150 ℃ -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5022 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 1.
5A ; IB1= -IB2= 0.
6A, L= 1mH; Clamped V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.
5A; IB= 0.
3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.
5A; IB= 0.
3A ICBO Collector Cutoff Current VCB= 500V ; IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 0.
3A ; VCE= 5V hFE-2 DC Current Gain IC= 1.
5A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.
3A ; VCE= 10V COB Output Capacitance Switching times IE= 0 ; VCB= 10V;ftest= 1.
0MHz ton Turn-on Time tstg Storage Time tf Fall Time IC= 2A , IB1= 0.
4A;IB2= -0.
8A RL= 100Ω;VCC= 200V MIN TYP.
MAX UNIT 500 V 500 V 800 V 7V 1.
0 V 1.
5 V 10 μA 10 μA 15 50 8 18 MHz 50 pF 0.
5 μs 3.
0 μs 0.
3 μs  hFE-1 Classifications ROY 15-30 20-40 30-50 isc website：www.
iscsemi.
cn 2 ...


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