Silicon NPN Power Transistor
Description
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KSD985
DESCRIPTION ·Collector–Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min.) ·DC Current Gain-
: hFE = 2000(Min) @ IC= 1A ·Low Collector Saturation Voltage
APPLICATIONS ·They are suitable for use to operate from IC without
predriver, such as hammer driver.
ABS...
Inchange Semiconductor
KSD985 PDF File
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