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KSD5012

Inchange Semiconductor
Part Number KSD5012
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 11, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5012 DESCRIPTION ·High Breakdown ...
Datasheet PDF File KSD5012 PDF File

KSD5012
KSD5012

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5012 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5012 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.
8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.
8A ICBO ...


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