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CEA3055L

Chino-Excel Technology
Part Number CEA3055L
Manufacturer Chino-Excel Technology
Description N-Channel Enhancement Mode Field Effect Transistor
Published Mar 23, 2005
Detailed Description CEA3055L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 3.7A, RDS(ON) = 100mΩ @VGS = 10V. RDS(ON) = 1...
Datasheet PDF File CEA3055L PDF File

CEA3055L
CEA3055L

Overview
CEA3055L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 3.
7A, RDS(ON) = 100mΩ @VGS = 10V.
RDS(ON) = 120mΩ @VGS = 4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-89 package.
D D SOT-89 S D G G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 60 VGS ±20 ID 3.
7 IDM 25 Maximum Power Dissipation PD 3 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units V V A A W C Units C/W 1998.
March 7-2 http://www.
cetsemi.
com CEA3055L Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward...


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