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TIC226N

Part Number	TIC226N
Manufacturer	Inchange Semiconductor
Description	Triacs
Published	Aug 15, 2016
Detailed Description	isc Triacs TIC226N FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants...
Datasheet	TIC226N PDF File

Overview

isc Triacs TIC226N FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(RMS) RMS on-state current (full sine wave)TC=85℃ 8 A ITSM Non-repetitive peak on-state current 70 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~150 ℃ Rth(j-c) Thermal resistance, junction to case 1.
8 ℃/W Rth(j-a) Thermal resistance, junction to ambient 62.
5 ℃/W EL...

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