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TIP147T

Part Number	TIP147T
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Darlington Power Transistor
Published	Aug 15, 2016
Detailed Description	isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor TIP147T DESCRIPTION ·High DC Current Gain- : hFE = ...
Datasheet	TIP147T PDF File

Overview

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor TIP147T DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type TIP142T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current- Continuous ...

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