DatasheetsPDF.com

IXFN100N65X2

IXYS
Part Number IXFN100N65X2
Manufacturer IXYS
Description Power MOSFET
Published Aug 16, 2016
Detailed Description X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN100N65X2 D G S S ...
Datasheet PDF File IXFN100N65X2 PDF File

IXFN100N65X2
IXFN100N65X2

Overview
X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN100N65X2 D G S S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 50/60 Hz, RMS t = 1 minute IISOL  1mA t = 1 second Mounting Torque Terminal Connection Torque Maximum Ratings 650 650 V V  30 V  40 V 78 A 200 A 15 A 3.
5 J 595 W 50 V/ns -55 .
.
.
+150 150 -55 .
.
.
+150 C C C 2500 3000 V~ V~ 1.
5/13 1.
3/11.
5 Nm/lb.
in Nm/lb.
in 30 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 50A, Note 1 Characteristic Values Min.
Typ.
Max.
650 V 3.
5 5.
0 V 100 nA 50 A 5 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)