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IXFT80N65X2HV

IXYS
Part Number IXFT80N65X2HV
Manufacturer IXYS
Description Power MOSFET
Published Aug 16, 2016
Detailed Description X2-Class HiPerFETTM Power MOSFET IXFT80N65X2HV VDSS = ID25 = RDS(on) 650V 80A 38m N-Channel Enhancement Mode Avala...
Datasheet PDF File IXFT80N65X2HV PDF File

IXFT80N65X2HV
IXFT80N65X2HV

Overview
X2-Class HiPerFETTM Power MOSFET IXFT80N65X2HV VDSS = ID25 = RDS(on) 650V 80A 38m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268HV (IXFT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Maximum Ratings 650 650 V V 30 V 40 V 80 A 160 A 20 A 3J 50 V/ns 890 W -55 .
.
.
+150 150 -55 .
.
.
+150 300 260 C C C °C °C 4g G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  High Voltage Package  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4m...


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