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CEG9926

Chino-Excel Technology
Part Number CEG9926
Manufacturer Chino-Excel Technology
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published Mar 23, 2005
Detailed Description CEG9926 Nov. 2002 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V....
Datasheet PDF File CEG9926 PDF File

CEG9926
CEG9926


Overview
CEG9926 Nov.
2002 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V , 4.
5A , RDS(ON)=30mΩ @VGS=4.
5V.
RDS(ON)=40m Ω @VGS=2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TSSOP-8 for Surface Mount Package.
G2 S2 S2 D2 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 6 S2 5 G2 ȀȀȀ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range G1 S1 S1 D1 9 TSSOP-8 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 Ć8 Ć4.
5 Unit V V A A A W C ...



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