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IXTN170P10P

IXYS

Power MOSFET

Description
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTN170P10P D G SS Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 2...


IXYS

IXTN170P10P

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