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IXTR140P10T

IXYS
Part Number IXTR140P10T
Manufacturer IXYS
Description Power MOSFET
Published Aug 18, 2016
Detailed Description TrenchPTM Power MOSFET IXTR140P10T P-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = ≤RDS(on) -100V - 110A 11...
Datasheet PDF File IXTR140P10T PDF File

IXTR140P10T
IXTR140P10T

Overview
TrenchPTM Power MOSFET IXTR140P10T P-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = ≤RDS(on) -100V - 110A 11mΩ ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Maximum Ratings -100 -100 ±15 ±25 - 110 - 400 -140 2.
5 V V V V A A A J 10 270 - 55 .
.
.
+150 150 - 55 .
.
.
+150 300 260 2500 V/ns W °C °C °C °C °C V~ 20.
.
120/4.
5.
.
27 5 N/lb.
...


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