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IXTR210P10T

IXYS
Part Number IXTR210P10T
Manufacturer IXYS
Description Power MOSFET
Published Aug 18, 2016
Detailed Description Preliminary Technical Information TrenchPTM Power MOSFET IXTR210P10T VDSS = ID25 = ≤RDS(on) -100V -195A 8mΩ P-Chann...
Datasheet PDF File IXTR210P10T PDF File

IXTR210P10T
IXTR210P10T

Overview
Preliminary Technical Information TrenchPTM Power MOSFET IXTR210P10T VDSS = ID25 = ≤RDS(on) -100V -195A 8mΩ P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Maximum Ratings -100 -100 ±15 ±25 -195 -160 - 800 -100 3 V V V V A A A...


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