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IXYQ40N65C3D1

IXYS
Part Number IXYQ40N65C3D1
Manufacturer IXYS
Description IGBT
Published Aug 19, 2016
Detailed Description Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYH40N65C3D1 IXYQ40N65C3D1 Extreme Light Punch Throug...
Datasheet PDF File IXYQ40N65C3D1 PDF File

IXYQ40N65C3D1
IXYQ40N65C3D1

Overview
Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYH40N65C3D1 IXYQ40N65C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 650V IC110 = 40A VCE(sat)  2.
35V tfi(typ) = 20ns TO-247 (IXYH) Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque TO-247 TO-3P Maximum Ratings 650 V 650 V ±20 V ±30 V 80 A 40 A 50 A 180 A 20 A 300 mJ ICM = 80 @VCE VCES 5 A μs 300 -55 .
.
.
+175 175 -55 .
.
.
+175 300 260 1.
13/10 6.
0 5.
5 W °C °C °C °C °C Nm/lb.
in g g G CE TO-3P (IXYQ) Tab G C E G = Gate E = Emitter Tab C = Collector Ta...


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