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CEM9939

Chino-Excel Technology
Part Number CEM9939
Manufacturer Chino-Excel Technology
Description Dual Enhancement Mode Field Effect Transistor(N and P Channel)
Published Mar 23, 2005
Detailed Description CEM9939 N-Channel BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1...
Datasheet PDF File CEM9939 PDF File

CEM9939
CEM9939

Overview
CEM9939 N-Channel BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.
2 1.
1 1.
0 0.
9 0.
8 0.
7 0.
6 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A 1.
15 1.
10 1.
05 1.
00 0.
95 0.
90 0.
85 -25 0 25 50 75 100 125 150 ID=250 A 5 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5.
Gate Threshold Variation with Temperature Figure 6.
Breakdown Voltage Variationwith Temperature VGS, Gate to Source Voltage (V) 13.
0 20.
0 9.
0 7.
0 5.
0 VDS=15V 2.
5 0 0 2 4 6 8 10 -ID, Drain Current (A) 11.
0 10.
0 5.
0 1.
0 0 0.
3 0.
6 0.
9 1.
2 1.
5 IDS, Drain-Source Current (A) VDS, Body Diode Forward Voltage (V) Figure 7.
Transconductance Variation with Temp...


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