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CET3055

N-Channel Enhancement Mode Field Effect Transistor

Description

CET3055 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4.0A, RDS(ON) = 100mΩ @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 DS G SOT-223 (J23Z) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit D...

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