DatasheetsPDF.com

EN27LN1G08

EON
Part Number EN27LN1G08
Manufacturer EON
Description 3.3V NAND Flash Memory
Published Aug 23, 2016
Detailed Description EN27LN1G08 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory EN27LN1G08 Features • Voltage Supply: 2.7V ~ 3.6V • Organiza...
Datasheet PDF File EN27LN1G08 PDF File

EN27LN1G08
EN27LN1G08

Overview
EN27LN1G08 1 Gigabit (128 M x 8), 3.
3 V NAND Flash Memory EN27LN1G08 Features • Voltage Supply: 2.
7V ~ 3.
6V • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes • Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max.
) - Serial Access : 25ns (Min.
) • Memory Cell: 1bit/Memory Cell • Fast Write Cycle Time - Page Program Time : 200µs (Typ.
) - Block Erase Time : 1.
5ms (Typ.
) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology • Endurance: - 100K Program/Erase Cycles (with 1 bit/528 bytes ECC) - Data Retention: 10 Years • Command Driven Operation • Cache Program Operation for High Performance Program • Copy-Back Operation • OTP Operation • Unique ID for Copyright Protection This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc.
, www.
eonssi.
com Rev.
C, Issue Date: 2013/10/03 General Description EN27LN1G08 Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity.
The device is offered in 3.
3V VCC.
Its NAND cell provides the most cost effective solution for the solid state mass storage market.
A program operation can be performed in typical 200us on the 2,112-byte page and an erase operation can be performed in typical 1.
5ms on a (128K+4K) bytes block.
Data in the data register can be read out at 25ns cycle time per byte.
The I/O pins serve as the ports for address and data input/output as well as command input.
The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.
Even the write-intensive systems can take advantage of this device’s extended reliability of 100K program/erase cycles ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)