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MMBT5401LT1

PNP Transistor

Description

TIGER ELECTRONIC CO.,LTD MMBT5401LT1 PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages. Features High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings Maximum Temperatures Storage Temperatur...

TGS

MMBT5401LT1 PDF File

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