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FP25R12W2T4_B11

Infineon
Part Number FP25R12W2T4_B11
Manufacturer Infineon
Description IGBT
Published Aug 26, 2016
Detailed Description TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP25R12W2T4_B11 EasyPIM™2BModulPressFITmit...
Datasheet PDF File FP25R12W2T4_B11 PDF File

FP25R12W2T4_B11
FP25R12W2T4_B11

Overview
TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP25R12W2T4_B11 EasyPIM™2BModulPressFITmitTrench/FeldstoppIGBT4undEmitterControlled4Diode EasyPIM™2BmodulePressFITwithtrench/fieldstopIGBT4andEmitterControlled4Diode IGBT,Wechselrichter/IGBT,Inverter VorläufigeDaten PreliminaryData HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES  1200 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC  25 39  A A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM  50  A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot  175  W Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage  VGES  +/-20 V CharakteristischeWerte/CharacteristicValues Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 25 A, VGE = 15 V IC = 25 A, VGE = 15 V IC = 25 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V .
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+15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 25 A, VCE = 600 V VGE = ±15 V RGon = 20 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 25 A, VCE = 600 V VGE = ±15 V RGon = 20 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,ind...


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