INSULATED GATE BIPOLAR TRANSISTOR
Description
PD -94907
IRG4BC20KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE Features
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
IGB...
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