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ME8107

P-Channel Enhancement Mode MOSFET

Description

ME8107/ME8107-G P-Channel Enhancement Mode MOSFET, ESD Protected GENERAL DESCRIPTION The ME8107 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low vo...

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