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HM5N60K

H&M Semiconductor
Part Number HM5N60K
Manufacturer H&M Semiconductor
Description 600V N-Channel MOSFET
Published Sep 1, 2016
Detailed Description HM5N60K / HM5N60I HM5N60K / HM5N60I 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL ...
Datasheet PDF File HM5N60K PDF File

HM5N60K
HM5N60K

Overview
HM5N60K / HM5N60I HM5N60K / HM5N60I 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 4.
5A, 600V, RDS(on) = 2.
50Ω @VGS = 10 V • Low gate charge ( typical 16nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability {D ● TO-252 TO-251 ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note...


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