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4GBJ4005

SeCoS
Part Number 4GBJ4005
Manufacturer SeCoS
Description 4.0 Amp Glass Passivited Bridge Rectifiers
Published Sep 15, 2016
Detailed Description Elektronische Bauelemente 4GBJ4005 ~ 4GBJ410 Voltage 50V ~ 1000V 4.0 Amp Glass Passivited Bridge Rectifiers RoHS Compl...
Datasheet PDF File 4GBJ4005 PDF File

4GBJ4005
4GBJ4005

Overview
Elektronische Bauelemente 4GBJ4005 ~ 4GBJ410 Voltage 50V ~ 1000V 4.
0 Amp Glass Passivited Bridge Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Surge overload rating -150 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product The plastic material has Underwriters Laboratory flammability classification 94V-0 Mounting position: Any 4GBJ REF.
A B C D E F G H I Millimeter Min.
Max.
24.
7 25.
3 14.
7 15.
3 4.
4 4.
8 17.
0 18.
0 3.
0 x 45° 3.
1 3.
4 4.
0 2.
5 2.
9 0.
9 1.
1 REF.
J K L M N P Q R S Millimeter Min.
Max.
0.
6 0.
8 7.
3 7.
7 1.
5 1.
9 1.
7 2.
1 1.
05 1.
45 3.
3 3.
8 9.
3 9.
7 3.
1 3.
4 3.
4 3.
8 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.
) Parameter Symbol 4GBJ 4005 4GBJ 401 Part Number 4GBJ 4GBJ 4GBJ 402 404 406 4GBJ 408 4GBJ 410 Unit Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Bridge Input Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage Maximum Average Forward (with heat sink) 2 Rectified Current @TC=100°C (without heat sink) Peak Forward Surge Current 8.
3ms Single Half Sine-Wave Super Imposed on Rated Load (JEDEC Method) VDC I(AV) IFSM 50 100 200 400 600 800 1000 V 4 A 2.
4 120 A Maximum Forward Voltage @ 4A DC VF 1.
1 V Maximum DC Reverse Current at Rated DC Blocking Voltage I2t Rating for Fusing (t<8.
3ms) TJ=25°C TJ=125°C Typical Junction Capacitance Per Element1 IR I2t CJ 10 µA 500 93 A2s 45 pF Typical Thermal Resistance RθJC 2.
2 °C/W Operating and Storage temperature range TJ,TSTG Notes： 1.
Measured at 1.
0MHz and applied reverse voltage of 4.
0V DC.
2.
Device mounted on 50mm*50mm*1.
6mm Cu plate heat sink.
http://www.
SeCoSGmbH.
com/ 19-Oct-2011 Rev.
A -55~150 °C Any changes of specification...


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