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KAF-09000

ON Semiconductor
Part Number KAF-09000
Manufacturer ON Semiconductor
Description CCD Image Sensor
Published Sep 17, 2016
Detailed Description KAF-09000 3056 (H) x 3056 (V) Full Frame CCD Image Sensor Description Combining high resolution with outstanding sensit...
Datasheet PDF File KAF-09000 PDF File

KAF-09000
KAF-09000

Overview
KAF-09000 3056 (H) x 3056 (V) Full Frame CCD Image Sensor Description Combining high resolution with outstanding sensitivity, the KAF−09000 image sensor has been specifically designed to meet the needs of next−generation low cost digital radiography and scientific imaging systems.
The high sensitivity available from 12−micron square pixels combines with a low noise architecture to allow system designers to improve overall image quality, or to relax system tolerances to achieve lower cost.
The excellent uniformity of the KAF−09000 image sensor improves overall image integrity by simplifying image corrections, while integrated anti−blooming protection prevents image bleed from over−exposure in bright areas of the image.
To simplify device integration, the KAF−09000 image sensor uses the same pin−out and package as the KAF−16801 image sensor.
The sensor utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity compared to the use of a standard front−side illuminated polysilicon electrode.
Table 1.
GENERAL SPECIFICATIONS Parameter Typical Value Architecture Full Frame CCD [Square Pixels] Total Number of Pixels 3103 (H) x 3086 (V) = 9.
6 Mp Number of Effective Pixels 3085 (H) x 3085 (V) = 9.
5 Mp Number of Active Pixels 3056 (H) x 3056 (V) = 9.
3 Mp Pixel Size Active Image Size 12 mm (H) x 12 mm (V) 36.
7 mm (H) x 36.
7 mm (V) 51.
9 mm diagonal, 645 1.
3x optical format Aspect Ratio Square Horizontal Outputs Saturation Signal Output Sensitivity Quantum Efficiency (550 nm) Responsivity (550 nm) Read Noise (f = 3 MHz) 1 110 ke− 24 mV/e− 64% 2595 ke/mJ/cm2 62.
3 V/mJ/cm2 7 e− Dark Signal (T = 25°C) 5 e/pix/sec Dark Current Doubling Temperature 7°C Linear Dynamic Range (f = 4 MHz) 84 dB Blooming Protection (4 ms exposure time) > 100 X saturation exposure Maximum Data Rate 10 MHz Package CERDIP, (sidebrazed pins, CuW) Cover Glass AR coated 2 sides Taped Clear NOTE: Parameters above are specified at T = 25°C unless otherwise noted.
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