MOSFET
Description
Main Product Characteristics:
VDSS
-30 V
RDS(on) 10.6 mΩ(typ.)
ID -12A
Features and Benefits:
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
GDSSF3611E
Marking a...
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