DatasheetsPDF.com

IXBF12N300

IXYS
Part Number IXBF12N300
Manufacturer IXYS
Description Monolithic Bipolar MOS Transistor
Published Sep 21, 2016
Detailed Description High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF12N300 VCES = IC1...
Datasheet PDF File IXBF12N300 PDF File

IXBF12N300
IXBF12N300

Overview
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF12N300 VCES = IC110 = VCE(sat) ≤ 3000V 11A 3.
2V Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load PC TJ TJM Tstg TL TSOLD FC VISOL Weight TC = 25°C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10 seconds Mounting Force 50/60Hz, 1 Minute Maximum Ratings 3000 3000 V V ± 20 ± 30 V V 26 A 11 A 98 A ICM = 98 1500 A V 125 W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 300 °C 260 °C 20.
.
120 / 4.
5.
...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)