Power MOSFET
Description
Advanced Technical Information
IXKC 15N60C5
CoolMOS™ 1) Power MOSFET
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
D
G S
ID25 = 15 A
VDSS
= 600 V
RDS(on) max = 0.165 Ω
ISOPLUS220TM
G D S
E72873
q
isolated back
surface
MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS ...
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