DatasheetsPDF.com

IXTQ102N20T

IXYS
Part Number IXTQ102N20T
Manufacturer IXYS
Description Power MOSFET
Published Sep 21, 2016
Detailed Description Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ1...
Datasheet PDF File IXTQ102N20T PDF File

IXTQ102N20T
IXTQ102N20T

Overview
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID25 = RDS(on) ≤ 200 102 23 V A mΩ Symbol VDSS VGSM I D25 ILRMS IDM I AS EAS dv/dt PD TJ TJM Tstg T L TSOLD Md F C Weight Test Conditions TJ = 25°C to 175°C Transient T = 25°C C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM T = 25°C C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 2.
5 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-247 & TO-3P) Mounting force (PLUS220) TO-247 TO-3P PLUS220 Maximum Ratings TO-247 (IXTH) 200 V ± 30 V 102 A 75 A 250 A G D S...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)