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SSF3639C

Part Number	SSF3639C
Manufacturer	Silikron Semiconductor
Description	MOSFET
Published	Sep 22, 2016
Detailed Description	SSF3639C DESCRIPTION The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate char...
Datasheet	SSF3639C PDF File

Overview

SSF3639C DESCRIPTION The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge.
The complementary MOSFET may be used in power inverters, and other applications.
GENERAL FEATURES ●N-Channel VDS = 30V,ID = 6.
3A RDS(ON) < 35.
5mΩ @ VGS=4.
5V RDS(ON) < 22mΩ @ VGS=10V ●P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.
5V RDS(ON) < 52mΩ @ VGS=-10V ●High Power and current handing capability ●Lead free product is acquired ●Surface Mount Package N-channel P-channel Schematic diagram Marking and pin Assignment SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 3639C SSF3639C SOP-8 Ø330mm Tape wi...

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