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AP50T10GI-HF

Part Number	AP50T10GI-HF
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 22, 2016
Detailed Description	Advanced Power Electronics Corp. AP50T10GI-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Dr...
Datasheet	AP50T10GI-HF PDF File

Overview

Advanced Power Electronics Corp.
AP50T10GI-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP50T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications.
The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
BVDSS RDS(ON) ID 100V 30mΩ 21.
8A GD S TO-220CFM(I) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 100 +20 21.
8 13.
8 80 31.
3 1.
92 -55 to 150 -55 to 150 V V A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 4 65 Units ℃/W ℃/W 1 201501292 AP50T10GI-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time I...

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AP50T10GI-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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