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ICE11N70

Micross Components
Part Number ICE11N70
Manufacturer Micross Components
Description N-Channel MOSFET
Published Sep 24, 2016
Detailed Description ICE11N70 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High...
Datasheet PDF File ICE11N70 PDF File

ICE11N70
ICE11N70

Overview
ICE11N70 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 11A 700V 0.
20Ω 85nC Pin Description: G TO-220 Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Rugged...


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