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STC6602

Stanson Technology
Part Number STC6602
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8A DESCRIPTION The STC6602 is the dual N&P-Channel enhancement...
Datasheet PDF File STC6602 PDF File

STC6602
STC6602

Overview
STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.
8A/-2.
8A DESCRIPTION The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION TSOP-6 FEATURE D1 S1 D2 02YW G1 S2 G2 Y: Year A: Week Code ORDERING INFORMATION Part Number Package Part Marking STC6602ST6RG TSOP-6 02YW ※ Week Code Code : A ~ Z ; a ~ z ※ STC6602ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stansontech.
com STC6602 2007.
V1 STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.
8A/-2.
8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Symbol VDSS Typical NP 30 -30 Unit V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ ID IDM 2.
8 -2.
8 A 2.
3 -2.
1 10 -8 A Continuous Source Current (Diode Conduction) IS 1.
25 -1.
4 A Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD TJ 1.
15 0.
75 -55/150 W ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient T≦10sec Steady State RθJA 50 90 52 ℃/W 90 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stansontech.
com STC6602 2007.
V1 STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.
8A/-2.
8A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V(BR)DSS VGS(th) IGSS VGS=0V,ID=250uA VGS=0V,ID=-250uA VDS=VGS,ID=250uA VDS=VGS,ID=-250uA VDS=0V,VGS=±20V N 30 p -30 N1 P1 N p ...


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