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STP413D

Stanson Technology
Part Number STP413D
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STP413D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP413D is the P-Channel logic enhancement mode power field...
Datasheet PDF File STP413D PDF File

STP413D
STP413D

Overview
STP413D P Channel Enhancement Mode MOSFET -12.
0A DESCRIPTION STP413D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE l -40V/-12.
0A, RDS(ON) = 36mΩ (Typ.
) @VGS = -10V l -40V/-8.
0A, RDS(ON) = 52mΩ @VGS =-4.
5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252,TO-251 package design PART MARKING Y：Year Code A：Perduce Code Q：Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2009, Stanson Corp.
STP413D 2009.
V1 STP413D P Channel Enhancement Mode MOSFET -12.
0A ABSOULT...


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