MOSFET
Description
STN2018
N Channel Enhancement Mode MOSFET
10.0A
DESCRIPTION
STN2018 is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, no...
Stanson Technology
STN2018 PDF File
Similar Datasheet
- STN2018 MOSFET - Stanson Technology