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STN6303

Stanson Technology
Part Number STN6303
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power fie...
Datasheet PDF File STN6303 PDF File

STN6303
STN6303

Overview
STN6303 Dual N Channel Enhancement Mode MOSFET 1.
0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer circuits where high-side switching, low in-line power loss and resistance to transients are needed.
PIN CONFIGURATION SOT-363 / SC70-6L D1 G2 S2 53YW FEATURE 23V/0.
5A, R =DS(ON) 400m-ohm@VGS =4.
5V 23V/0.
75A, RDS(ON) =550m-ohm@VGS =2.
5V Super high density cell design for e...


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