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DN2640

Supertex
Part Number DN2640
Manufacturer Supertex
Description N-Channel Depletion-Mode Vertical DMOS FETs
Published Sep 26, 2016
Detailed Description – OBSOLETE – DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX 400V R...
Datasheet PDF File DN2640 PDF File

DN2640
DN2640

Overview
– OBSOLETE – DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX 400V RDS(ON) (max) 6.
0Ω IDSS (min) 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Features High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Applications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage BVDSX BVDGX ± 20V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* * Distance of 1.
6 mm from case for 10 seconds.
300°C Advanced DMOS Technology These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
8 Package Options SGD TO-92 Note: See Package Outline section for dimensions.
8-13 Thermal Characteristics DN2640 Package ID (continuous)* ID (pulsed) Power Dissipation @ TC = 25°C θjc °C/W θja °C/W TO-92 250mA 600mA 1.
0W 125 – OBSOLETE –* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified) 170 IDR* 250mA IDRM 600mA Symbol BVDSX VGS(OFF) ∆VGS(OFF) IGSS ID(OFF) Parameter Drain-to-Source Breakdown Voltage Gate-to-Source OFF Voltage Change in VGS(OFF) with Te...


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