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AP30G40AEO

Advanced Power Electronics
Part Number AP30G40AEO
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2016
Detailed Description Advanced Power Electronics Corp. AP30G40AEO Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=130...
Datasheet PDF File AP30G40AEO PDF File

AP30G40AEO
AP30G40AEO

Overview
Advanced Power Electronics Corp.
AP30G40AEO Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=130A @VGE=3.
3V ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free C C C C TSSOP-8 G E E E VCE ICP G 400V 130A C E Absolute Maximum Ratings Symbol Parameter Rating VCE Collector-Emitter Voltage 400 VGEP Peak Gate-Emitter Voltage +6 ICP PD@TA=25oC1 Pulsed Collector Current, VGE @ 3.
3V Maximum Power Dissipation 130 1 TSTG Storage Temperature Range -55 to 150 TJ Junction Temperature Range -55 to 150 .
Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
IGES Gate-Emitter Leak...


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