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UT8R512K8

Part Number	UT8R512K8
Manufacturer	Aeroflex Circuit Technology
Description	512K x 8 SRAM
Published	Oct 4, 2016
Detailed Description	Standard Products UT8R512K8 512K x 8 SRAM Data Sheet March 2009 www.aeroflex.com/memories FEATURES 15ns maximum acces...
Datasheet	UT8R512K8 PDF File

Overview

Standard Products UT8R512K8 512K x 8 SRAM Data Sheet March 2009 www.
aeroflex.
com/memories FEATURES 15ns maximum access time Asynchronous operation for compatibility with industry- standard 512K x 8 SRAMs CMOS compatible inputs and output levels, three-state bidirectional data bus - I/O Voltage 3.
3 volts, 1.
8 volt core Operational environment: - Intrinsic total-dose: 300K rad(Si) - SEL Immune >100 MeV-cm2/mg - LETth (0.
25): 53.
0 MeV-cm2/mg - Memory Cell Saturated Cross Section 1.
67E-7cm2/bit - Neutron Fluence: 3.
0E14n/cm2 - Dose Rate - Upset 1.
0E9 rad(Si)/sec - Latchup >1.
0E11 rad(Si)/sec Packaging options: - 36-lead ceramic flatpack (3.
762 grams) Standard Microcircuit Drawing 59...

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UT8R512K8 512K x 8 SRAM - Aeroflex Circuit Technology

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