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AP75T10GS-HF

Advanced Power Electronics
Part Number AP75T10GS-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Oct 6, 2016
Detailed Description Advanced Power Electronics Corp. AP75T10GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple ...
Datasheet PDF File AP75T10GS-HF PDF File

AP75T10GS-HF
AP75T10GS-HF

Overview
Advanced Power Electronics Corp.
AP75T10GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP75T10GP) are available for low-profile applications.
BVDSS RDS(ON) ID G D S 100V 15mΩ 65A TO-220(P) GD S TO-263(S) Absolute Maximum Ratings@Tj=25o.
C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 100 +20 65 41 260 138 1.
11 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 0.
9 40 62 Units ℃/W ℃/W ℃/W 1 201411055 AP75T10GS/P-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A VGS=4.
5V, ID=16A VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=10V, ID=30A IDSS Drain-Source Leakage Current VDS=100V, VGS=0V Drain-Source Leakage...


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