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AM90P03-02P

Analog Power
Part Number AM90P03-02P
Manufacturer Analog Power
Description P-Channel MOSFET
Published Oct 6, 2016
Detailed Description Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proces...
Datasheet PDF File AM90P03-02P PDF File

AM90P03-02P
AM90P03-02P

Overview
Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, cellular and cordless telephones.
• Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe TO-220 saves board space • Fast switching speed • High performance trench technology AM90P03-02P PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) -30 2.
9 @ VGS = 10V 3.
8 @ VGS = 4.
5V ID (A) 90a D1 G1 S1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TC=25oC ID IDM IS TC=25oC PD TJ, Tstg -40 ±20 90 390 110 300 -55 to 175 V A A W oC THERMALRESISTANCERATINGS Parameter Symbol MaximumJunction-to-Ambienta RθJA MaximumJunction-to-Case RθJC Notes a.
Package Limited b.
Pulse width limited by maximum junction temperature Maximum Units 62.
5 oC/W 0.
5 oC/W PRELIMINARY 1 Publication Order Number: DS-AM90P03-02_A Analog Power AM90P03-02P SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time VGS(th) IGSS IDSS ID (o n ) rD S(o n ) gfs VSD VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V VDS = -32 V, VGS = 0 V VDS = -32 V, VGS = 0 V, TJ = 55oC VDS = -5 V, VGS = 10 V VGS = 10 V, ID = 2 A VGS = 4.
5 V, ID = 2 ...


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