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AM50N10-18D

Analog Power
Part Number AM50N10-18D
Manufacturer Analog Power
Description N-Channel MOSFET
Published Oct 7, 2016
Detailed Description Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast s...
Datasheet PDF File AM50N10-18D PDF File

AM50N10-18D
AM50N10-18D

Overview
Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM50N10-18D VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 18 @ VGS = 10V 24 @ VGS = 5.
5V ID(A) 43 37 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C VGS ID IDM IS PD ±20 43 160 55 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 40 3 Units °C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature © Preliminary ...


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