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AM110P06-06B

Analog Power
Part Number AM110P06-06B
Manufacturer Analog Power
Description P-Channel MOSFET
Published Oct 8, 2016
Detailed Description Analog Power P-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast sw...
Datasheet PDF File AM110P06-06B PDF File

AM110P06-06B
AM110P06-06B

Overview
Analog Power P-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM110P06-06B VDS (V) -60 PRODUCT SUMMARY rDS(on) (mΩ) 6 @ VGS = -10V 7 @ VGS = -4.
5V ID(A) -90 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -60 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25°C TA=25°C VGS ID IDM IS PD ±20 -90 -390 -110 300 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.
5 0.
5 Units °C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature © Prelim...


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