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NVBF170L

ON Semiconductor
Part Number NVBF170L
Manufacturer ON Semiconductor
Description Power MOSFET
Published Oct 10, 2016
Detailed Description MMBF170L, NVBF170L Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applica...
Datasheet PDF File NVBF170L PDF File

NVBF170L
NVBF170L

Overview
MMBF170L, NVBF170L Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current − Continuous − Pulsed THERMAL CHARACTERISTICS VDSS 60 Vdc VDGS 60 Vdc VGS ± 20 Vdc VGSM ± 40 Vpk ID 0.
5 Adc IDM 0.
8 Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1.
) TA = 25°C Derate above 25°C PD 225 mW 1.
8 mW/°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature RqJA TJ, Tstg 556 −55 to +150 °C/W °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
FR−5 = 1.
0  0.
75  0.
062 in.
http://onsemi.
com 500 mA, 60 V RDS(on) = 5 W SOT−23 CASE 318 STYLE 21 N−Channel 3 1 2 MARKING DIAGRAM & PIN ASSIGNMENT 3 Drain 6Z MG G Gate 1 2 Source 6Z = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev.
9 1 Publication Order Number: MMBF170LT1/D MMBF170L, NVBF170L ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mA) Gate−Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 1.
0 mA) Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 200 mA) On−Stat...


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