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IRG4CC20FB

Part Number	IRG4CC20FB
Manufacturer	International Rectifier
Description	IGBT Die
Published	Oct 10, 2016
Detailed Description	IRG4CC20FB IGBT Die in Wafer Form PD- 91831A IRG4CC20FB C G E 600 V Size 2 Fast Speed 6" Wafer Electrical Characteri...
Datasheet	IRG4CC20FB PDF File

Overview

IRG4CC20FB IGBT Die in Wafer Form PD- 91831A IRG4CC20FB C G E 600 V Size 2 Fast Speed 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) VCE (on) V(BR)CES Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage 1.
6V Max.
600V Min.
VGE(th) ICES Gate Threshold Voltage Zero Gate Voltage Collector Current 3.
0V Min.
, 6.
0V Max.
250µA Max.
IGES Gate-to-Emitter Leakage Current ± 1.
1µA Max.
Test Conditions IC = 3.
25A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, VGE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Fro...

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IRG4CC20FB IGBT Die - International Rectifier

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