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2N6574

Part Number	2N6574
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Oct 17, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO = 275V(Min.) ·Fast Switching...
Datasheet	2N6574 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO = 275V(Min.
) ·Fast Switching Speed ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width- modulated regulators and a variety of power switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 275 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage ...

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