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2SA1069-Z

Inchange Semiconductor
Part Number 2SA1069-Z
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Oct 17, 2016
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·100% avalanche te...
Datasheet PDF File 2SA1069-Z PDF File

2SA1069-Z
2SA1069-Z

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators,DC/DC converters, and high frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -12 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2.
5 A 1.
5 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1069-Z isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless...


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