Silicon PNP Power Transistor
Description
isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-gain audio amplifier and power
Switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃...
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